The Effect of Substrate on Structural and Electrical Properties of Cu3N Thin Film by DC Reactive Magnetron Sputtering

Document Type: Regular Article

Authors

1 Department of physics, faculty of science, payame noor university, tehran, Iran

2 Department of physics, faculty of science, kharazmi university, tehran, Iran

Abstract

The aim of this paper is to study the effect of substrate on the Cu3N thin films. At first Cu3N thin films are prepared using DC magnetron sputtering system. Then structural properties, surface roughness, and electrical resistance are studied using X-ray diffraction (XRD), the atomic force microscope (AFM) and four-point probe techniques respectively. Finally, the results are investigated and compared for glass and Si substrate. The results show a phase transition in orientation from (111) and (100) planes to (200) plane when the substrate of the sample is changed from glass to Si. Also, the grain size of deposited particles on films increased, changing substrate from glass to Si. Then, AFM results show that surface roughness on Si substrate is more than the glass substrate. Finally, four-point probe techniques show that surface electrical resistivity is increased sharply, changing substrate from silicon to glass.

Graphical Abstract

The Effect of Substrate on Structural and Electrical Properties of Cu3N Thin Film by DC Reactive Magnetron Sputtering

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